Module IBC-2009:
Microelectronics 2
Microelectronics 2 2023-24
IBC-2009
2023-24
School of Computer Science & Engineering
Module - Semester 2
10 credits
Module Organiser:
Iestyn Pierce
Overview
Explanation of drift (mobility), diffusion and generation-recombination mechanisms. Photoexcitation, equilibrium concentration of minority carriers and minority carrier lifetime. Steady state continuity equation leading to minority carrier diffusion length. The Haynes Shockley experiment and the Hall effect. Fabrication methods. Operation explained in terns of energy band diagrams. Application of the 1-d Poisson equation to the depletion region. Derivation of I-V characteristics of diode. Comparison of ideal and practical diodes. I-V characteristics of transistors. Large signal gain. Punch-through, avalanche and Zener breakdown processes. ESD protection. Band diagrams for ohmic and rectifying contacts. Role of metal work function. Achieving ohmic contacts to both n and p type silicon with only 1 metal. Schottky barrier diodes, solar cells. The MOS capacitor. The MOSFET.
Assessment Strategy
-threshold -Equivalent to 40%. Uses key areas of theory or knowledge to meet the Learning Outcomes of the module. Is able to formulate an appropriate solution to accurately solve tasks and questions. Can identify individual aspects, but lacks an awareness of links between them and the wider contexts. Outputs can be understood, but lack structure and/or coherence.
-good -Equivalent to the range 60%-69%. Is able to analyse a task or problem to decide which aspects of theory and knowledge to apply. Solutions are of a workable quality, demonstrating understanding of underlying principles. Major themes can be linked appropriately but may not be able to extend this to individual aspects. Outputs are readily understood, with an appropriate structure but may lack sophistication.
-excellent -Equivalent to the range 70%+. Assemble critically evaluated, relevant areas of knowledge and theory to construct professional-level solutions to tasks and questions presented. Is able to cross-link themes and aspects to draw considered conclusions. Presents outputs in a cohesive, accurate, and efficient manner.
Learning Outcomes
- Understand and analyse the basic operation of MOS devices.
- Understand the important role of metal-semiconductor contacts.
- Understand the origin of drift, diffusion and generation-recombination in semiconductor devices and critically evaluate their contributions to the total device current.
- Understand, explain and analyse the operation of pn junction diodes and bipolar transistors including device breakdown.
Assessment method
Exam (Centrally Scheduled)
Assessment type
Summative
Description
Final exam
Weighting
80%
Assessment method
Coursework
Assessment type
Summative
Description
Assignment
Weighting
20%