Overview

Indicative content includes:

• Review of semiconductors, p and n type doping
• Charge carrier transpost (e.g., drift, diffusion and generation-recombination mechanisms). Majority and minority carriers and minority carrier lifetime
• The Hall effect.
• p-n junction diodes operation explained in terms of energy band diagrams. Derivation of I-V characteristics of diode.
• Device fabrication technology for microelectronics and nanophotonics
• I-V characteristics of bipolar junction transistors.
• Punch-through, avalanche and Zener breakdown processes.
• Band diagrams for ohmic and rectifying contacts. Role of metal work function.
• The MOS capacitor. The MOSFET. Frequency response of the MOS capacitor. The mode of operation of a MOSFETs.
• MOSFET scaling; different scaling methods and the development of FINFETs, MESFET, JFET, Hetero-junctions and HEMT.
• Basic MOS circuitry, characterisation of inverter circuits; MOS-based memory elements
• Principles of light, ray optics and electromagnetics waves
• Polarisation and power reflection/refraction laws
• Optical interference as related to diffraction gratings, interferometers and resonators
• Optical waveguides, optical fibres and nanophotonic chips.
• Photons and the particle model of light. Optical properties of semiconductors
• Light detection, photovoltaics and solar cells
• Light emitting diodes, optical gain, population inversion and lasers

Assessment Strategy

-threshold -Equivalent to 40%. Uses key areas of theory or knowledge to meet the Learning Outcomes of the module. Is able to formulate an appropriate solution to accurately solve tasks and questions. Can identify individual aspects, but lacks an awareness of links between them and the wider contexts. Outputs can be understood, but lack structure and/or coherence.

-good -Equivalent to the range 60%-69%. Is able to analyse a task or problem to decide which aspects of theory and knowledge to apply. Solutions are of a workable quality, demonstrating understanding of underlying principles. Major themes can be linked appropriately but may not be able to extend this to individual aspects. Outputs are readily understood, with an appropriate structure but may lack sophistication.

-excellent -Equivalent to the range 70%+. Assemble critically evaluated, relevant areas of knowledge and theory to construct professional-level solutions to tasks and questions presented. Is able to cross-link themes and aspects to draw considered conclusions. Presents outputs in a cohesive, accurate, and efficient manner.

Learning Outcomes

• Explain and analyse the operation of pn junction diodes and bipolar transistors including device breakdown.

• Illustrate the properties and operation of MOS-based devices, including the fabrication processes necessary for building these devices.

• Related concepts in microelectronics and nanophotonics to explain the operation of semiconductor-based photonic devices such as solar cells, LEDs and lasers.

• Understand and explain the origin of drift, diffusion and generation-recombination in semiconductor devices and critically evaluate their contributions to the total device current.

• Understand the general principles of light (ray, wave and photon models) and use these to quantitatively analyse and explain concepts such as Fresnel refraction/reflection, diffraction, interference, resonance and waveguide modes.